elektronische bauelemente 2SB1274 -3a , -60v pnp plastic encapsulated transistor 25-jun-2013 rev. b page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? general purpose switching and amplification. ? wide aso (adoption of mbit process) ? low saturation voltage. absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -60 v emitter to base voltage v ebo -6 v collector current - continuous i c -3 a collector power dissipation p c 2 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -60 - - v i c = -1ma, i e =0 collector to emitter breakdown voltage v (br)ceo -60 - - v i c = -5ma, i b =0 emitter to base breakdown voltage v (br)ebo -6 - - v i e = -1ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -40v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 100 - 200 v ce = -5v, i c = -500ma dc current gain h fe 20 - - v ce = -5v, i c = -3a collector to emitter saturation voltage v ce(sat) - - -1 v i c = -2a, i b = -200ma base to emitter saturation voltage v be(sat) - - -1 v v ce = -5v, i c = -500ma transition frequency f t - 100 - mhz v ce = -5v, i c = -500ma collector output capacitance c ob - 60 - pf v cb = -10v, i e =0, f=1mhz to-220j
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